Part Details for 2N7002-T1-GE3 by Vishay Intertechnologies
Overview of 2N7002-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for 2N7002-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
15R6202
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Newark | Sot23 Nch Mosfet 60V 7.5R |Vishay 2N7002-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1170 / $0.1890 | Buy Now |
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DISTI #
79AH9218
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Newark | Sot23 Nch Mosfet 60V 7.5R Rohs Compliant: No |Vishay 2N7002-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1550 | Buy Now |
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DISTI #
2N7002-T1-GE3
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Avnet Americas | SOT23 NCH MOSFET 60V 7.5R - Tape and Reel (Alt: 2N7002-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
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$0.0761 / $0.0967 | Buy Now |
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DISTI #
781-2N7002-GE3
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Mouser Electronics | MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS: Compliant | 600982 |
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$0.1120 / $0.4000 | Buy Now |
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DISTI #
V72:2272_09215335
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Arrow Electronics | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2226 Container: Cut Strips | Americas - 693 |
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$0.1049 / $0.3802 | Buy Now |
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Future Electronics | 60V 115mA 0.2W 7.5ohm @ 10V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.0643 | Buy Now |
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DISTI #
2N7002-T1-GE3
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TTI | MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 39000 In Stock |
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$0.1110 | Buy Now |
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DISTI #
2N7002-T1-GE3
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Avnet Americas | SOT23 NCH MOSFET 60V 7.5R - Tape and Reel (Alt: 2N7002-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
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$0.0761 / $0.0967 | Buy Now |
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DISTI #
2N7002-T1-GE3
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TME | Transistor: N-MOSFET, unipolar, 60V, 0.115A, Idm: 0.8A, 0.08W, SOT23 Min Qty: 10 | 1779 |
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$0.1100 / $0.2700 | Buy Now |
Part Details for 2N7002-T1-GE3
2N7002-T1-GE3 CAD Models
2N7002-T1-GE3 Part Data Attributes:
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2N7002-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
2N7002-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 6 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N7002-T1-GE3
This table gives cross-reference parts and alternative options found for 2N7002-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7002T,215 | 2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin | NXP Semiconductors | 2N7002-T1-GE3 vs 2N7002T,215 |
| 2N7002L | N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω N-Channel MOSFET 60V 115mA 7.5 ?, 3000-REEL | onsemi | 2N7002-T1-GE3 vs 2N7002L |
| 2N7002Q-7-F | Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | 2N7002-T1-GE3 vs 2N7002Q-7-F |
| 2N7002,215 | 2N7002 - 60 V, 300 mA N-channel Trench MOSFET@en-us TO-236 3-Pin | Nexperia | 2N7002-T1-GE3 vs 2N7002,215 |
| 2N7002 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Micro Commercial Components | 2N7002-T1-GE3 vs 2N7002 |
| 2N7002 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | 2N7002-T1-GE3 vs 2N7002 |
| 2N7002T | Small Signal Field-Effect Transistor, | Tak Cheong Electronics (Holdings) Co Ltd | 2N7002-T1-GE3 vs 2N7002T |
| 2N7002 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Vishay Siliconix | 2N7002-T1-GE3 vs 2N7002 |
| 2N7002MTF_NL | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Fairchild Semiconductor Corporation | 2N7002-T1-GE3 vs 2N7002MTF_NL |
| 2N7002 | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | Nexperia | 2N7002-T1-GE3 vs 2N7002 |